| PART |
Description |
Maker |
| T521X337M016ATE050 |
T521, Tantalum, Polymer Tantalum, 330 uF, 20%, 16 V, 7343, SMD, Polymer, Molded, Low ESR, Non-Combustible, 50 mOhms, Height Max = 4.3mm
|
Kemet Corporation
|
| T527I226M010ATE200-17 |
Tantalum, Polymer Tantalum, Reduced Volume, T527, 22 uF, 20%, 10 V, 3216, SMD, Polymer, Molded, Face Down Terminals, 200mOhms, 1mm
|
Kemet Corporation
|
| MICROSMD050F MICROSMD050F-2 |
Specification Status: Released
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| RSH0J271MCN1GB RSH0E391MCN1GB RSL0E101MCN1GB RSL0E |
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 6.3 V, 270 uF, SURFACE MOUNT ROHS COMPLIANT
FUNCTIONAL POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS
|
Nichicon, Corp.
Nichicon corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM075F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| NANOSMDM100F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| EPC4 EPC8 |
Configuration Devices for SRAM-Based LUT Devices
|
Altera Corporation
|
| FP-6R3ME471M-HAR FP-6R3ME331M-HAR FP-6R3ME391M-HAR |
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 6.3 V, 470 uF, SURFACE MOUNT ROHS COMPLIANT
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 6.3 V, 330 uF, SURFACE MOUNT ROHS COMPLIANT
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 6.3 V, 390 uF, SURFACE MOUNT ROHS COMPLIANT
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 16 V, 150 uF, SURFACE MOUNT ROHS COMPLIANT
FUNCTIONALA POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS
FUNCTIONAL POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS
|
Nichicon, Corp.
Nichicon corporation
|
| T543A226K010ATE080 |
Tantalum, Polymer Tantalum, COTS, T543_COTS, 22 uF, 10%, 10 V, 3216, SMD, Polymer, Molded, COTS, Up Screening, N/A, 80mOhms, Height Max = 1.8mm
|
Kemet Corporation
|
|
